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dual op amp and voltage reference AP4300 1 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet general description the AP4300 is a monolithic ic specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. the device contains two operational amplifiers and a precision shunt regulator. op amp 1 is designed for voltage control, whose non-inverting input internally connects to the output of the shunt regulator. op amp 2 is for current control with both inputs uncommitted. the ic offers the power co nverter designer a control solution that features incr eased precision with a corre- sponding reduction in system complexity and cost. the AP4300 is available in standard packages of dip- 8 and soic-8. features op amp input offset voltage: 0.5mv supply current: 250 a per op amp at 5.0v sup- ply voltage unity gain bandwidth: 1mhz output voltage swing: 0 to (v cc -1.5) v power supply range: 3 to 18v voltage reference fixed output voltage reference: 2.5v, 2.6v voltage tolerance: 0.5%, 1% sink current capability from 0.1 to 80ma applications battery charger switching power supply figure 1. package types of AP4300 soic-8 dip-8
dual op amp and voltage reference AP4300 2 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet functional block diagram figure 2. pin configuration of AP4300 input 1- input 1+ / v ka gnd v cc output 2 input 2- input 2+ 1 4 5 6 7 8 3 2 top view output 1 figure 3. functional block diagram of AP4300 - + - + 1 2 3 4 8 7 6 5 output 1 input 1 gnd v cc output 2 input 2 (soic-8/dip-8) m package/p package pin configuration
dual op amp and voltage reference AP4300 3 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 5. voltage reference functional block diagram functional block diagram (continued) figure 4. op amp functional block diagram (each amplifier) v ka gnd 20 a20 a q2 q4 q3 q1 q8 q9 6 a 4 a q10 q11 50 a q5 q6 q13 rsc cc 100 a q7 input- input+ output q12 v cc
dual op amp and voltage reference AP4300 4 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet package refer- ence vo lt ag e voltage tolerance tempera- ture range part number marking id packing type tin lead lead free tin lead lead free dip-8 2.6v 0.5% -40 to 105 o c AP4300ap-a AP4300ap-ae1 AP4300ap-a AP4300ap-ae1 tube 1% AP4300bp-a AP4300bp-ae 1 AP4300bp-a AP4300bp-ae1 2.5v 0.5% AP4300ap-b AP4300ap-be1 AP4300ap-b AP4300ap-be1 1% AP4300bp-b AP4300bp-be1 AP4300bp-b AP4300bp-be1 soic-8 2.6v 0.5% -40 to 105 o c AP4300am-a AP4300am-ae1 AP4300am-a AP4300am-ae1 tube AP4300am-atr AP4300am-atre1 AP4300am-a AP4300am-ae1 tape & reel 1% AP4300bm-a AP4300bm-ae1 AP4300bm-a AP4300bm-ae1 tube AP4300bm-atr AP4300bm-atre1 AP4300bm-a AP4300bm-ae1 tape & reel 2.5v 0.5% AP4300am-b AP4300am-be1 AP4300am-b AP4300am-be1 tube AP4300am-btr AP4300am-btre1 AP4300am-b AP4300am-be1 tape & reel 1% AP4300bm-b AP4300bm-be1 AP4300bm-b AP4300bm-be1 tube AP4300bm-btr AP4300bm-btre1 AP4300bm-b AP4300bm-be1 tape & reel circuit type voltage tolerance a: 0.5% b: 1% package p: dip-8 m: soic-8 output voltage reference a: 2.6v b: 2.5v bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. AP4300 - e1: lead free blank: tin lead tr: tape and reel blank: tube ordering information
dual op amp and voltage reference AP4300 5 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet parameter symbol value unit power supply voltage (v cc to gnd) v cc 20 v op amp 1 and 2 input voltage range (pins 2, 5, 6) v in -0.3 to v cc +0.3 v op amp 2 input differential voltage (pins 5, 6) v id 20 v voltage reference cathode current (pin 3) i k 100 ma power dissipation (t a =25 o c) p d dip-8 800 mw soic-8 500 operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering 10s) t l 260 o c note 1: stresses greater than those listed under "absol ute maximum ratings" may cause permanent damage to the device. these are stress ratings only , and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating c onditions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter min max unit supply voltage 3 18 v ambient temperature -40 105 o c recommended operating conditions absolute maximum ratings (note 1)
dual op amp and voltage reference AP4300 6 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet operating conditions: v cc = + 5v, t a =25 o c unless otherwise specified. electrical characteristics parameter conditions min typ max unit total supply current, excluding current in voltage reference v cc =5v, no load, -40 o c t a 105 o c 0.5 0.8 ma v cc =18v, no load, -40 o c t a 105 o c 0.6 1.2 voltage reference section reference voltage for AP4300-a i k =10ma, t a =25 o c 0.5% tolerance 2.587 2.600 2.613 v 1% tolerance 2.574 2.626 reference voltage for AP4300-b i k =10ma, t a =25 o c 0.5% tolerance 2.487 2.500 2.513 v 1% tolerance 2.475 2.525 reference voltage de viation over full temperature range i k =10ma, t a =-40 to 105 o c 524mv minimum cathode current for regula- tion 0.1 1 ma dynamic impedance i k =1.0 to 80ma, f<1khz 0.2 0.5 ? op amp 1 section (v cc =5v, v o =1.4v, t a =25 o c, unless otherwise noted) input offset voltage t a =25 o c 0.5 3 mv t a =-40 to 105 o c 5 input offset voltage temperature drift t a =-40 to 105 o c 7 v/ o c input bias current (inverting input only) t a =25 o c 20 150 na large signal voltage gain v cc =15v, r l =2k ? , v o =1.4 to 11.4v 85 100 db power supply rejection ratio v cc =5 to 18v 70 90 db output current source v cc =15v, v id =1v, v o =2v 20 40 ma sink v cc =15v, v id =-1v, v o =2v 10 20 ma output voltage swing (high) v cc =18v, r l =10k ? , v id =1v 16 16.5 v output voltage swing (low) v cc =18v, r l =10k ? , v id =-1v 17 100 mv slew rate v cc =18v, r l =2k ? , a v =1, v in =0.5 to 2v, c l =100pf 0.2 0.5 v/ s gain bandwidth product v cc =18v, r l =2k ? , c l =100pf, v in =10mv, f=100khz 0.7 1 mhz
dual op amp and voltage reference AP4300 7 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet parameter conditions min typ max unit op amp 2 section (v cc =5v, v o =1.4v, t a =25 o c, unless otherwise noted) input offset voltage t a =25 o c 0.5 3 mv t a =-40 to 105 o c 5 input offset voltage temperature drift t a =-40 to 105 o c 7 v/ o c input offset current t a =25 o c 230na input bias current t a =25 o c 20 150 na input voltage range v cc =0 to 18v 0 v cc -1.5 v common mode re jection ratio t a =25 o c, v cm =0 to 3.5v 70 85 db large signal voltage gain v cc =15v, r l =2k ? , v o =1.4 to 11.4v 85 100 db power supply rejection ratio v cc =5 to 18v 70 90 d output current source v cc =15v, v id =1v, v o =2v 20 40 ma sink v cc =15v, v id =-1v, v o =2v 10 20 ma output voltage swing (high) v cc =18v, r l =10k ? , v id =1v 16 16.5 v output voltage swing (low) v cc =18v, r l =10k ? , v id =-1v 17 100 mv slew rate v cc =18v, r l =2k ? , a v =1, v in =0.5 to 2v, c l =100pf 0.2 0.5 v/ s gain bandwidth product v cc =18v, r l =2k ? , c l =100pf, v in =10mv, f=100khz 0.7 1 mhz electrical characteristics (continued) operating conditions: v cc = + 5v, t a =25 o c unless otherwise specified.
dual op amp and voltage reference AP4300 8 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet -2-10123 -100 -50 0 50 100 150 cathode current (ma) cathode voltage (v) az4300-b v ka =v ref t a =25 0 c -40 -20 0 20 40 60 80 100 120 2.580 2.585 2.590 2.595 2.600 2.605 2.610 AP4300-a reference voltage (v) ambient temperature ( o c) -40-20 0 20406080100120 2.480 2.485 2.490 2.495 2.500 2.505 2.510 AP4300-b reference voltage (v) ambient temperature ( o c) figure 7. reference voltage vs. ambient temperature figure 6. reference voltage vs. ambient temperature -40-20 0 20406080100120 0 5 10 15 20 25 30 input bias current (na) ambient temperature ( o c) figure10. input bias current vs. ambient temperature 0 2 4 6 8 101214161820 60 70 80 90 100 110 voltage gain(db) supply voltage (v) r l =2k ? r l =20k ? figure 11. operational amplifier voltage gain figure 9. cathode current vs. cathode voltage typical performance characteristics -2-10123 -100 -50 0 50 100 150 cathode current (ma) cathode voltage (v) az4300-a v ka =v ref t a =25 0 c figure 8. cathode current vs. cathode voltage
dual op amp and voltage reference AP4300 9 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 12. application of AP4300 in a co nstant current and constant voltage charger ac line smps r2 current sense r7 r8 battery pack r4 r3 r5 r6 r1 opto isolator + - op amp 2 + - op amp 2 AP4300 typical application
dual op amp and voltage reference AP4300 10 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet mechanical dimensions dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ
dual op amp and voltage reference AP4300 11 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited data sheet soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 5.000(0.197) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 mechanical dimens ions (continued)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office 27b, tower c, 2070, middle shen nan road, shenzhen 518031, china tel: +86-755-8368 3987, fax: +86-755-8368 3166 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 6386 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

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